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TSM2N60SCWRP Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSM2N60SCWRP
Descripción Electrónicos  600V N-Channel Power MOSFET
PDF  8 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM2N60SCWRP Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM2N60S
600V N-Channel Power MOSFET
2/2
Version: A09
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS =0V, ID =250uA
BVDSS
600
--
--
V
Drain-Source On-State Resistance
VGS =10V, ID =0.6A
RDS(ON)
--
3.6
5
Ω
Gate Threshold Voltage
VDS =VGS, ID =250uA
VGS(TH)
2
--
4
V
Zero Gate Voltage Drain Current
VDS =600V, VGS =0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS =±30V, VDS =0V
IGSS
--
--
±100
nA
Forward Transconductance
VDS =10V, ID =0.2A
gfs
--
0.8
--
S
Diode Forward Voltage
IS =0.6A, VGS =0V
VSD
--
0.85
1.15
V
Dynamic
b
Total Gate Charge
Qg
--
13
--
Gate-Source Charge
Qgs
--
2
--
Gate-Drain Charge
VDS =400V, ID =0.6A,
VGS = 10V
Qgd
--
6
--
nC
Input Capacitance
Ciss
--
435
--
Output Capacitance
Coss
--
56
--
Reverse Transfer Capacitance
VDS =25V, VGS =0V,
f =1.0MHz
Crss
--
9.2
--
pF
Switching
c
Turn-On Delay Time
td(on)
--
12
--
Turn-On Rise Time
tr
--
21
--
Turn-Off Delay Time
td(off)
--
30
--
Turn-Off Fall Time
VGS =10V, ID =0.6A,
VDD =300V, RG =18Ω
tf
--
24
--
nS
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c.
Switching time is essentially independent of operating temperature.



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