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SSF5508 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF5508 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  ©Silikron Semiconductor CO.,LTD. 2009.12.26 Version : 1.0 page 1of5 SSF5508 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 110 A ID@Tc=100ْC Continuous drain current,VGS@10V 80 IDM Pulsed drain current ① 400 PD@TC=25ْC Power dissipation 170 W Linear derating factor 2.0 W/ ْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns EAS Single pulse avalanche energy ② 480 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.73 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 55 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance —4.5 8 mΩ VGS=10V,ID=68A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current —— 2 μA VDS=55V,VGS=0V —— 10 VDS=55V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF5508 TOP View (TO220) ID =110A BV=55V Rdson=4.5 mΩ(typ.) Feathers: Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF5508 is assembled in high reliability and qualified assembly house. Application: Power switching application |
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