ACE3401 datasheet(3/8 Pages) ACE

3 / 8 page

ACE3401

Technology

P-Channel Enhancement Mode MOSFET

VER 1.2

Electrical Characteristics

(TA=25 ,

℃

Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS

VGS=0V, ID=-250uA

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.4

-1.0

Gate Leakage Current

IGSS

VDS=0.V, VGS=±12V

±100

VDS=-24V, VGS=0V

-1

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V TJ=55℃

-10

On-State Drain Current

ID(ON)

VDS≦-5V, VGS=-10V

-10

VGS=-10V, ID=-4.0A

0.045 0.055

VGS=-4.5V, ID=-3.2A

0.050 0.065

Drain-Source On-Resistance

RDS(ON)

VGS=-2.5V, ID=-1.2A

0.060 0.075

Ω

Forward Transconductance

Gfs

VDS=-5.0V, ID=-4.0A

Diode Forward Voltage

VSD

IS=-1.0A, VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

VDS=-15V, VGS=-10V,

ID≣-4.0A

3.7

Input Capacitance

Ciss

540

Output Capacitance

Coss

131

Reverse Transfer Capacitance

Crss

VDS=-15V, VGS=0V,

f=1MHz

105

td(on)

Turn-On Time

td(off)

Turn-Off Time

VDD=-15V, RL=15Ω

ID≡-1.0A, VGEN=-10V

RG=6Ω

ACE3401 Datasheet(PDF) 3 Page - ACE Technology Co., LTD.

ACE3401 Datasheet(HTML) 3 Page - ACE Technology Co., LTD.

Html Pages

1 2 3 4 5 6 7 8

Datasheet Descarga

Enlace URL