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TC58FVT641 Datasheet(PDF) 21 Page - Toshiba Semiconductor

No. de pieza TC58FVT641
Descripción Electrónicos  64-MBIT (8M 횞 8 BITS / 4M 횞 16 BITS) CMOS FLASH MEMORY
PDF  53 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC58FVT641 Datasheet(HTML) 21 Page - Toshiba Semiconductor

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TC58FVT641/B641FT/XB-70,-10
2001-09-06
21/53
AC CHARACTERISTICS AND OPERATING CONDITIONS
READ CYCLE
PRODUCT NAME
-70
-10
OUTPUT CAPACITANCE LOAD (CL)
30pF
100pF
30pF
100pF
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNIT
tRC
Read Cycle Time
70
80
90
100
ns
tACC
Address Access Time
70
80
90
100
ns
tCE
CE
Access Time
70
80
90
100
ns
tOE
OE
Access Time
30
35
35
40
ns
tCEE
CE
to Output Low-Z
0
0
0
0
ns
tOEE
OE
to Output Low-Z
0
0
0
0
ns
tOH
Output Data Hold Time
0
0
0
0
ns
tDF1
CE
to Output High-Z
25
25
30
30
ns
tDF2
OE
to Output High-Z
25
25
30
30
ns
BLOCK PROTECT
SYMBOL
PARAMETER
MIN
MAX
UNIT
tVPT
VID Transition Time
4
µs
tVPS
VID Set-up Time
4
µs
tCESP
CE
Set-up Time
4
µs
tVPH
OE
Hold Time
4
µs
tPPLH
WE Low-Level Hold Time
100
µs
PROGRAM AND ERASE CHARACTERISTICS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
Auto-Program Time (Byte Mode)
8
300
µs
tPPW
Auto-Program Time (Word Mode)
11
300
µs
tPCEW
Auto Chip Erase Time
95
1350
s
tPBEW
Auto Block Erase Time
0.7
10
s
tEW
Erase/Program Cycle
10
5
Cycles



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