TC58FVT641 datasheet(19/53 Pages) TOSHIBA

19 / 53 page

TC58FVT641/B641FT/XB-70,-10

2001-09-06

19/53

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

RANGE

UNIT

VDD

VDD Supply Voltage

−0.6~4.6

VIN

Input Voltage

−0.6~VDD + 0.5 (≤ 4.6)

VDQ

Input/Output Voltage

−0.6~VDD + 0.5 (≤ 4.6)

VIDH

Maximum Input Voltage for A9, OE and RESET

13.0

VACCH

Maximum Input Voltage for

/ACC

10.5

Power Dissipation

126

Tsolder

Soldering Temperature (10s)

260

°C

Tstg

Storage Temperature

−55~150

°C

Topr

Operating Temperature

−40~85

°C

IOSHORT

Output Short-Circuit Current

(1)

100

(1) Outputs should be shorted for no more than one second.

No more than one output should be shorted at a time.

CAPACITANCE (Ta

==== 25°C, f ==== 1 MHz)

TSOPI

SYMBOL

PARAMETER

CONDITION

MAX

UNIT

CIN

Input Pin Capacitance

VIN = 0 V

COUT

Output Pin Capacitance

VOUT = 0 V

CIN2

Control Pin Capacitance

VIN = 0 V

This parameter is periodically sampled and is not tested for every device.

TFBGA

SYMBOL

PARAMETER

CONDITION

MAX

UNIT

CIN

Input Pin Capacitance

VIN = 0 V

TBD

COUT

Output Pin Capacitance

VOUT = 0 V

TBD

CIN2

Control Pin Capacitance

VIN = 0 V

TBD

This parameter is periodically sampled and is not tested for every device.

RECOMMENDED DC OPERATING CONDITIONS

SYMBOL

PARAMETER

MIN

MAX

UNIT

VDD

VDD Supply Voltage

2.7

3.6

VIH

Input High-Level Voltage

0.7

× VDD

VDD + 0.3

(2)

VIL

Input Low-Level Voltage

−0.3

(1)

0.2

× VDD

VID

High-Level Voltage for A9, OE and RESET

11.4

12.6

VACC

High-Level Voltage for

/ACC

8.5

9.5

Operating Temperature

−40

°C

(1)

−2 V (pulse width of 20 ns max)

(2)

+2 V (pulse width of 20 ns max)

TC58FVT641 Datasheet(PDF) 19 Page - Toshiba Semiconductor

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