DA6011.000

15 September 2008

2 (8)

PAD LAYOUT: MAS6011AA3

1040 µ

µ

µ

µ

m

SOL

VDD

GND

LB

XPD

MAS6011

DIE size = 1040 mm x 1540 mm

PAD size = 80 x 80 µm

Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages

(ESD). Make sure that GND is the first pad to be bonded. Pick-and-place and all component assembly are

recommended to be performed in ESD protected area.

Note: If the die is to be placed on metal plane, the metal plane should be connected to GND or left floating

because the substrate of the die is internally connected to GND.

Note: Coordinates are pad center points where origin has been located in the center of the silicon die.

Pad Identification

Name

X-coordinate

Y-coordinate

Power Supply Ground

GND

-129 µm

563 µm

Power Down Output

XPD

253 µm

563 µm

Solar Charging Output

SOL

-167 µm

-563 µm

Power Supply Voltage

VDD

102 µm

-563 µm

Low Battery Output

LB

253 µm

-563 µm