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2SD553 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD553 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD553 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 50 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 0.9 1.2 V ICBO Collector cut-off current VCB=70V; IE=0 30 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 240 hFE-2 DC current gain IC=4A ; VCE=1V 30 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF fT Transition frequency IC=1A ; VCE=4V 10 MHz Switching times ton Turn-on time 0.2 μs ts Storage time 2.5 μs tf Fall time IB1=- IB2=0.3A RL=10Ω; VCC=30V 0.5 μs hFE-1Classifications O Y 70-140 120-240 2 |
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