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STM4635 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STM4635
Descripción Electrónicos  P-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4635 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
-40
V
-1
IGSS
±10
nA
VGS(th)
-1.0
V
gFS
9.5
S
VSD
CISS
935
pF
COSS
192
pF
CRSS
105
pF
Qg
7
nC
16
nC
Qgs
99
nC
Qgd
18
tD(ON)
17
ns
tr
1.4
ns
tD(OFF)
4.6
ns
tf
ns
Gate-Drain Charge
VDS=-20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-20V
ID=-1A
VGS=-10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-20V,ID=-7A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-7A
VDS=-20V , ID=-7A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-250uA
VDS= -32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
-3.0
VGS=-4.5V , ID=-5.7A
33
50
m ohm
f=1.0MHz
c
VDS=-20V,ID=-7A,
VGS=-20V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=-1.7A
-0.75
-1.2
V
Notes
a.Surface Mounted on FR4 Board, t <10sec.
b.Pulse Test:Pulse Width<300us, Duty Cycle< 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1.25mH,RG=25
Ω,VDD=20V,VGS=10V.(See Figure13)
_
_
STM4635
www.samhop.com.tw
Aug,15,2008
2
nC
VDS=-20V,ID=-7A,VGS=-4.5V
8
_
c
IS
Maximum Continuous Drain-Source Diode Forward Current
-1.7
A
27
38
Ver 1.0
b
-1.6



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