STM4635 datasheet(1/7 Pages) SAMHOP

No. de pieza	STM4635

Descripción Electrónicos	P-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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1 / 7 page

S mHop Microelectronics C orp.

a

STM4635

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

-40

-7

-39

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

-40V

-7A

50 @ VGS=-4.5V

33 @ VGS=-10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Suface Mount Package.

P-Channel Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted

Limit

Drain Current-Continuous

-Pulsed

b

A

www.samhop.com.tw

Aug,15,2008

1

Details are subject to change without notice.

TA=25°C

ESD Procteced

)

a

50

W

PD

°C

2.5

-55 to 150

°C/W

TA=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

a

Ver 1.0

TA=70°C

A

-5.6

TA=70°C

W

1.6

EAS

Single Pulse Avalanche Energy

d

mJ

35

S O-8

1

4

3

2

1

D

G

S

5

6

7

8

S

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STM4635 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

STM4635 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp.

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