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BDT81F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BDT81F
Descripción Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT81F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BDT81F/83F/85F/87F
DESCRIPTION
·DC Current Gain -hFE = 40(Min)@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F;
100V(Min)- BDT85F; 120V(Min)- BDT87F
·Complement to Type BDT82F/84F/86F/88F
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃
a
)
SYMBOL
PARAMETER
VALUE
UNIT
BDT81F
60
BDT83F
80
BDT85F
100
VCBO
Collector-Base Voltage
BDT87F
120
V
BDT81F
60
BDT83F
80
BDT85F
100
VCEO
Collector-Emitter Voltage
BDT87F
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current
4
A
PC
Collector Power Dissipation
TC=25℃
36
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6
℃/W
isc Website：www.iscsemi.cn


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