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BDT81F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDT81F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT81F/83F/85F/87F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT81F 60 BDT83F 80 BDT85F 100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT87F IC= 30mA; IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 1.6 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V 1.5 V ICES Collector Cutoff Current VCE= 0.8VCBOmax; VBE= 0 1 mA ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 50mA ; VCE= 10V 40 hFE-2 DC Current Gain IC= 5A ; VCE= 4V 40 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 10 MHz Switching Times ton Turn-On Time 1 μs toff Turn-Off Time IC= 7A; IB1= -IB2= 0.7A 2 μs isc Website:www.iscsemi.cn |
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