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STW75NF30 Datasheet(PDF) 5 Page - STMicroelectronics |
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STW75NF30 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STW75NF30 Electrical characteristics 5/12 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 150 V, ID = 30 A RG = 4.7 Ω, VGS = 10 V, (see Figure 14) 115 87 141 101 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse with limited by maximum temperature Source-drain current Source-drain current (pulsed) 60 240 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 60 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60 A,VDD = 60 V di/dt = 100 A/µs (see Figure 19) 252 2.5 20 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =60 A, VDD = 60 V di/dt = 100 A/µs Tj = 150°C (see Figure 19) 316 3.7 23.2 ns µC A |
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