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STP90N4F3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP90N4F3 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STD90N4F3 - STI90N4F3 - STP90N4F3 - STU90N4F3 Electrical characteristics 5/16 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 16) 15 50 ns ns td(off) tf Turn-off delay time Fall time VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 16) 40 15 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 80 320 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD=80 A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, di/dt = 100 A/µs, VDD=30 V, Tj=150°C (see Figure 15) 45 60 2.8 ns nC A |
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