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STY15NA100 Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STY15NA100
Descripción Electrónicos  N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET
PDF  4 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY15NA100 Datasheet(HTML) 2 Page - STMicroelectronics

  STY15NA100 Datasheet HTML 1Page - STMicroelectronics STY15NA100 Datasheet HTML 2Page - STMicroelectronics STY15NA100 Datasheet HTML 3Page - STMicroelectronics STY15NA100 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-Heatsink
Typ
with Conductive Grease
0.42
40
0.05
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max
15
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 50 V)
3000
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
1000
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating x 0.8
Tc = 125
oC
50
500
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS = VGS
ID = 250
µA
2.25
3
3.75
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 7.5 A
0.65
0.77
Ω
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
15
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 7.5 A
12
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
7000
600
150
pF
pF
pF
STY15NA100
2/5



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