STS4NF100 datasheet(1/8 Pages) STMICROELECTRONICS

No. de pieza	STS4NF100

Descripción Electrónicos	N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET™ II POWER MOSFET

PDF	8 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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July 2001

.

STS4NF100

N-CHANNEL 100V - 0.065

Ω - 4A SO-8

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.065 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100 % AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STS4NF100

100 V

<0.070

Ω

4 A

SO-8

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuos) at TC = 25°C

Drain Current (continuos) at TC = 100°C

4

2.5

A

IDM(•)

Drain Current (pulsed)

16

A

Ptot

Total Dissipation at TC = 25°C

2.5

W

INTERNAL SCHEMATIC DIAGRAM

Número de pieza similar - STS4NF100

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STS4NF100 Datasheet(PDF) 1 Page - STMicroelectronics

STS4NF100 Datasheet(HTML) 1 Page - STMicroelectronics

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