2SJ554 datasheet(2/8 Pages) RENESAS

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2SJ554

Rev.4.00 Sep 07, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

–60

Gate to source voltage

VGSS

±20

Drain current

–45

Drain peak current

ID (pulse)

Note 1

–180

Body to drain diode reverse drain current

IDR

–45

Avalanche current

IAP

Note 3

–45

Avalanche energy

EAR

Note 3

173

Channel dissipation

Pch

Note 2

100

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

3. Value at Tch = 25

°C, Rg ≥ 50 Ω

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

–60

—

ID = –10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

IG =

±100 µA, VDS = 0

Zero gate voltage drain current

IDSS

—

–10

µA

VDS = –60 V, VGS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±16 V, VDS = 0

Gate to source cutoff voltage

VGS (off)

–1.0

—

–2.0

ID = –1 mA, VDS = –10 V

RDS (on)

—

0.028

0.037

Ω

ID = –25 A, VGS = –10 V

Note 4

Static drain to source on state resistance

RDS (on)

—

0.038

0.055

Ω

ID = –25 A, VGS = –4 V

Note 4

Forward transfer admittance

|yfs|

—

ID = –25 A, VDS = –10 V

Note 4

Input capacitance

Ciss

—

2500

—

Output capacitance

Coss

—

1300

—

Reverse transfer capacitance

Crss

—

300

—

VDS = –10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

Rise time

—

160

—

Turn-off delay time

td (off)

—

350

—

Fall time

—

240

—

VGS = –10 V

ID = –25 A

RL = 1.2

Ω

Body to drain diode forward voltage

VDF

—

–1.1

—

IF = –45 A, VGS = 0

Body to drain diode reverse recovery time

trr

—

100

—

IF = –45 A, VGS = 0

diF/dt = 50 A/

µs

Note:

4. Pulse test

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