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STPS15L45CB Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STPS15L45CB
Descripción Electrónicos  LOW DROP POWER SCHOTTKY RECTIFIER
PDF  4 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS15L45CB Datasheet(HTML) 2 Page - STMicroelectronics

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STPS15L45CB
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Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage current
Tj = 25°C
VR =VRRM
1mA
Tj = 125°C
23
45
mA
VF *
Forward voltage drop
Tj = 25
°CIF = 7.5 A
0.52
V
Tj = 125°C
IF = 7.5 A
0.40
0.46
Tj=25
°CIF =12 A
0.60
Tj = 125°C
IF =12 A
0.49
0.57
Tj=25
°CIF =15 A
0.64
Tj = 125°C
IF =15 A
0.53
0.63
Pulse test : * tp = 380 µs,
δ <2%
To evaluate the conduction losses use the following equation :
P=0.29xIF(AV) + 0.023 IF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
Total
4
2.4
°C/W
Rth(c)
Coupling
0.7
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCES
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
01
23
45
67
89
10
IF(av)(A)
PF(av)(W)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ=tp/T
tp
Fig. 1: Conduction losses versus average current.
0
1
2
3
4
5
6
7
8
9
0
25
50
75
100
125
150
Tamb(°C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=70°C/W
IF(av)(A)
T
δ=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
δ = 0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.



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