STP85NF3LL datasheet(1/9 Pages) STMICROELECTRONICS

No. de pieza	STP85NF3LL

Descripción Electrónicos	N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

March 2001

STP85NF3LL

STB85NF3LL-1

N-CHANNEL 30V - 0.006

Ω - 85A TO-220/I2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.0075 Ω (@4.5V)

s

OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the

third genaration of STMicroelectronics unique “

Single Feature Size” strip-based process. The re-

sulting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP85NF3LL

STB85NF3LL-1

30 V

< 0.008

Ω

< 0.008

Ω

85 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 15

V

ID

Drain Current (continuos) at TC = 25°C

85

A

ID

Drain Current (continuos) at TC = 100°C

60

A

IDM (q)

Drain Current (pulsed)

340

A

PTOT

Total Dissipation at TC = 25°C

110

W

Derating Factor

0.73

W/°C

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

TO-220

1

2

3

1

2

3

I2PAK

INTERNAL SCHEMATIC DIAGRAM

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