STP6NB25 datasheet(3/9 Pages) STMICROELECTRONICS

No. de pieza	STP6NB25

Descripción Electrónicos	N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STP6NB25/FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 125 V, ID =3 A

RG = 4.7Ω VGS =10 V

(see test circuit, Figure 3)

9ns

Total Gate Charge

VDD = 200V, ID =6 A,

VGS = 10V

Qgs

Gate-Source Charge

7.5

Qgd

Gate-Drain Charge

Symbol

Parameter

Test Condit ions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 200V, ID =6 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

8ns

Fall Time

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 6 A, VGS =0

1.6

trr

Reverse Recovery Time

ISD = 6 A, di/dt = 100A/µs,

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

160

Qrr

Reverse Recovery Charge

720

µC

IRRM

Reverse Recovery Current

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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