STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1

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GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3.

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally

be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient

and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid

the usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

25

V

αT

Voltage Thermal Coefficient

T=25°C Note(3)

1.3

Rz

Dynamic Resistance

90

Ω