STB210NF02 datasheet(2/14 Pages) STMICROELECTRONICS

No. de pieza	STB210NF02

Descripción Electrónicos	N-CHANNEL 20V - 0.0026 ohm - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STB210NF02/-1 STP210NF02

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (*)

DYNAMIC

Rthj-case

Rthj-amb

Rthj-pcb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Thermal Resistance Junction-pcb

Maximum Lead Temperature For Soldering Purpose

(for 10 sec. 1.6 mm from case)

Max

Typ

0.5

62.5

see curve on page 6

300

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA

VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 50 A

2.6

3.2

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS = 10 V

ID = 50 A

130

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 15V, f = 1 MHz, VGS = 0

5100

3500

800

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