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STN2NE06 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STN2NE06
Descripción Electrónicos  N-CHANNEL 60V - 0.18ohm - 2A - SOT-223 STripFET POWER MOSFET
PDF  8 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN2NE06 Datasheet(HTML) 1 Page - STMicroelectronics

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STN2NE06
N-CHANNEL 60V - 0.18
Ω - 2A - SOT-223
STripFET
™ POWER MOSFET
s
TYPICAL RDS(on) = 0.18
Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
AVALANCHE RUGGED TECHNOLOGY
s
100 % AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
”Single
Feature
Size
™” stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL (DISK DRIVES,etc.)
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
®
INTERNAL SCHEMATIC DIAGRAM
April 1999
1
2
2
3
SOT-223
TYPE
VDSS
RDS(on)
ID
STN2NE06
60 V
< 0.25
Ω
2A
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
VDS
Drain-source Volt age (VGS =0)
60
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)60
V
VGS
Gat e-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc =25
oC2
A
ID
Drain Current (continuous) at Tc =100
oC1.3
A
IDM(
•)
Drain Current (pulsed)
8
A
Ptot
Tot al Dissipation at Tc =25
oC2.5
W
Derating F act or
0.02
W /
oC
dv/ dt(1 )
Peak Diode Recovery voltage slope
6
V/ns
Tstg
Storage T emperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
( 1)ISD
≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
1/8


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