2STW1693 datasheet(4/10 Pages) STMICROELECTRONICS

No. de pieza	2STW1693

Descripción Electrónicos	High power PNP epitaxial planar bipolar transistor

PDF	10 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

2STW1693

4/10

Electrical characteristics

(TCASE = 25°C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -80V

-0.1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = -6V

-0.1

µA

V(BR)EBO

Collector-emitter breakdown

voltage (IC = 0)

IE = -1mA

-6

V(BR)CBO

Collector-emitter breakdown

voltage (IE = 0)

IC = -100µA

-80

V(BR)CEO

Collector-emitter breakdown

voltage (IB = 0)

IC = -50mA

-80

VCE(sat) (1)

Pulsed duration = 300

µs, duty cycle ≤1.5%

Collector-emitter saturation

voltage

IC = -2A

IB = -200mA

IC = -6A

IB = -600mA

-0.6

-1.5

VBE (1)

Base-emitter voltage

VCE = -5V

IC = -5A

-1.5

hFE

DC current gain

IC = -2A

VCE = -4V

120

Transition frequency

IC = -0.5A

VCE = -12V

MHz

CCBO

Collector-base capacitance

IE = 0 VCB = -10V f = 1MHz

ton

tstg

toff

Turn-on time

Storage time

Fall time

IC = -3A

VCC = -30V

IB1 = -IB2 = -0.3A

0.18

0.6

0.09

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