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2STW1693 Datasheet(PDF) 1 Page - STMicroelectronics |
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2STW1693 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  October 2007 Rev 1 1/10 10 2STW1693 High power PNP epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = -80V ■ Complementary to 2STW4466 ■ Typical ft = 20MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCESAT behaviour. Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. Table 1. Device summary Figure 1. Internal schematic diagram TO-247 1 2 3 Order code Marking Package Packaging 2STW1693 2STW1693 TO-247 Tube www.st.com |
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