STB5NB60 datasheet(1/9 Pages) STMICROELECTRONICS

No. de pieza	STB5NB60

Descripción Electrónicos	N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STB5NB60

N - CHANNEL 600V - 1.8

Ω -5A- I2PAK/D2PAK

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.8

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

January 2000

1 2

3

I

2PAK

TO-262

(suffix ”-1”)

TYPE

VDSS

RDS(on)

ID

ST B5NB60

600 V

< 2.0

Ω

5A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

600

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC5

A

ID

Drain Current (continuous) at Tc =100

oC3.1

A

IDM (

•)

Drain Current (pulsed)

20

A

Ptot

T otal Dissipation at Tc =25

oC100

W

Derating Factor

0.8

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4.5

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

1

3

D

2PAK

TO-263

(Suffix ”T4”)

1/9

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