STB4NB50 datasheet(1/6 Pages) STMICROELECTRONICS

No. de pieza	STB4NB50

Descripción Electrónicos	N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STB4NB50

N - CHANNEL 500V - 2.5

Ω - 3.8A - D2PAK/I2PAK

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 2.5

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

October 1998

TYPE

VDSS

RDS(on)

ID

STB4NB50

500 V

< 2.8

Ω

3.8 A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

500

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

3.8

A

ID

Drain Current (continuous) at Tc = 100

oC

2.4

A

IDM(

•)

Drain Current (pulsed)

15.2

A

Ptot

Total Dissipation at Tc = 25

o C80

W

Derating Factor

0.64

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1

2

3

I

2PAK

TO-262

(suffix "-1")

1

3

D

2PAK

TO-263

(Suffix "T4")

1/8

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