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STB160NF03L Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STB160NF03L
Descripción Electrónicos  N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET™ POWER MOSFET
PDF  9 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB160NF03L Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±15V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
1V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 80 A
0.0021
0.0030
Ω
VGS = 5 V, ID = 80 A
0.0042
0.0070
Ω
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS =10V
160
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID =80 A
210
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
5600
pF
Coss
Output Capacitance
1720
pF
Crss
Reverse Transfer
Capacitance
310
pF



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