STN3PF06

Electrical characteristics

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Note:

For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Rise time

(see Figure 13)

20

40

ns

ns

Turn-off delay time

Fall time

(see Figure 13)

40

10

ns

ns

Off-voltage rise time

Fall time

Cross-over time

(see Figure 13)

10

17

30

ns

ns

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

(1)

1.

Pulse width limited by Tjmax

Source-drain current

Source-drain current (pulsed)

2.5

10

A

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

1.2

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

100

260

5.2

ns

µC

A