2

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-6

RthJA

2

°C/W

Maximum Junction-to-Case (Drain)

-0.

RthJC

8

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

8

VGS = 0 V, ID

VDS

= 250 μA

00

-

-

V

ΔVDS/T

VDS Temperature Coefficient

J

-0

Reference to 25 °C, ID = 1 mA

.78

-

V/°C

Gate-Source Threshold Voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

2

-

4

V

Gate-Source Leakage

VGS

IGSS

= ± 20 V

-

-

± 100

nA

VGS = ± 30 V

-

-

± 1

μA

Zero Gate Voltage Drain Current

VDS = 800 V, VGS

IDSS

= 0 V

-

-

1

μA

VDS = 520 V, VGS = 0 V, TJ = 125 °C

-

-

10

Drain-Source On-State Resistance

VGS = 10

RDS(on)

V

ID = 6 A

0.

-

50

Ω

Forward Transconductance

VDS = 30 V, ID

gfs

= 6 A

-

3.5

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 100 V,

122

f = 1 MHz

-

7

-

Output Ca

pF

pacitance

Coss

-65

-

Reverse Transfer Capacitance

Crss

-4

-

Effective Output Capacitance, Energy

Relateda

Co(er)

-5

VDS = 0 V to 520 V, VGS = 0 V

0

-

Effective Output Capacitance, Time

Relatedb

Co(tr)

-

160

-

Total Gate Charge

Qg

VGS = 10 V

-3

ID = 6 A, VDS = 520 V

5

73

nC

Gate-Source Charge

Qgs

-9

-

Gate-Drain Charge

Qgd

-17

-

Turn-On Delay Time

td(on)

VDD = 520 V, ID = 6 A,

-1

VGS = 10 V, Rg = 9.1

Ω

6

32

ns

Rise Time

tr

-19

38

Turn-Off Delay Time

td(off)

-35

70

Fall Time

tf

-18

36

Gate Input Resistance

Rg

f = 1 MHz, open drain

-

0.81

-

Ω

Drain-Source Body Diode Characteristics

MOSFET symbol

showing the

integral reverse

Continuous Source-Drain Diode Current

IS

p - n junction diode

--

A

Pulsed Diode Forward Current

ISM

--

28

Diode Forward Voltage

VSD

TJ = 25 °C, IS = 6 A, VGS = 0 V

-

1.0

1.2

V

Reverse Recovery Time

trr

TJ = 25 °C, IF = IS = 6 A,

dI/dt = 100 A/μs, VR = 25 V

-

309

618

ns

Reverse Recovery Charge

-3.

Qrr

8

7.6

μC

Reverse Recovery Current

IRRM

-21

-

A

S

D

G

-

1

1

服务热线：400-655-8788

www.VBsemi.com

APT8075BVR-VB