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IXFN210N20P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IXFN210N20P
Descripción Electrónicos  N-Channel MOSFET
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFN210N20P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXFN210N20P Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFN210N20P Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFN210N20P Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISFM1434
eq IXFN210N20P
N-Channel MOSFET
www.iscsemi.com
1
DESCRIPTION
·
Drain Current -ID= 188A@ TC=25℃
·
Drain Source Voltage
-VDSS= 200V(Min)
·
Static Drain-Source On-Resistance
-RDS(on) = 10.5mΩ(Max)@VGS= 10V
APPLICATIONS
·
DC-DC Coverters
·
Battery Chargers
·
DC Choppers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous
188
A
IDM
Pulse Width Limited by TJM
600
A
PD
Total Dissipation
1070
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.14
℃
/W


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