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IRF520 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF520 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor IRF520 www.iscsemi.com 1 FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC Converter, Power Switch and Solenoid Drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pulse 40 A PD Total Dissipation @TC=25℃ 70 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.14 ℃ /W |
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Descripción similar - IRF520 |
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