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AP600N04HTLG5 Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP600N04HTLG5
Descripción Electrónicos  40V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP600N04HTLG5 Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP600N04HTLG5
40V N-Channel Enhancement Mode MOSFET
AP600N04HTLG5 REV1.0
永源微電子科技有限公司
Description
The AP600N04HTLG5 uses advanced APM-SGT V technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =600A
RDS(ON) < 0.62mΩ @ VGS=10V （Type：0.48mΩ）
Application
BMS
BLDC
UPS
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP600N04HTLG5
TOLLA-8L
AP600N04HTLG5 XXX YYYY
2000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
40
V
VGSS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
600
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
420
A
IDM
Pulsed Drain Current
2400
A
EAS
Single Pulsed Avalanche Energy
1864
mJ
IAS
Avalanche Current
64
A
PD@TC=25
℃
Power Dissipation
320
W
TJ
Operating Junction Temperature Range
-55 to 175
°C
TSTG
Storage Temperature Range
-55 to 175
°C
RθJA
Thermal Resistance Junction-Ambient 1
35
°C/W
RθJC
Thermal Resistance, Junction to Case
0.15
℃/W


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