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AP2303AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP2303AI
Descripción Electrónicos  -17V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP2303AI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP2303AI
-17V P-Channel Enhancement Mode MOSFET
AP2303AI REV1.0
永源微電子科技有限公司
Description
The AP2303AI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -17V ID =-3.3A
RDS(ON) < 100mΩ @ VGS=-4.5V (Type：85mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP2303AI
SOT23L
A3SHB
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-17
V
VGS
Gate-Source Voltage
±12
V
ID@TA=25
℃
Continuous Drain Current, VGS @ -4.5V1
-3.3
A
ID@TA=70
℃
Continuous Drain Current, VGS @ -4.5V1
-2.1
A
IDM
Pulsed Drain Current2
-10
A
PD@TA=25
℃
Total Power Dissipation3
1.0
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
125
℃/W
RθJC
Thermal resistance, junction-case
110
℃/W


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