AP2301DI datasheet(1/7 Pages) APME

No. de pieza	AP2301DI

Descripción Electrónicos	-20V P-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP2301DI

-20V P-Channel Enhancement Mode MOSFET

AP2301DI REV1.0

永源微電子科技有限公司

Description

The AP2301DI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-2.1A

RDS(ON) < 150mΩ @ VGS=-4.5V (Type：118mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP2301DI

SOT23L

2301D

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TA=25

℃

Continuous Drain Current, VGS @ -4.5V1

-2.1

A

ID@TA=70

℃

Continuous Drain Current, VGS @ -4.5V1

-0.8

A

IDM

Pulsed Drain Current2

-7.2

A

PD@TA=25

℃

Total Power Dissipation3

1.0

W

PD@TA=70

℃

Total Power Dissipation3

0.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃/W

RθJC

Thermal resistance, junction-case

32

℃/W

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AP2301DI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP2301DI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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