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AP100P01D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP100P01D
Descripción Electrónicos  -15V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP100P01D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100P01D
-15V P-Channel Enhancement Mode MOSFET
AP100P01D Rve1.0
臺灣永源微電子科技有限公司
Description
The AP100P01D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -15V
ID =-100 A
RDS(ON) < 3.5m
Ω @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100P01D
AP100P01D XXX YYYY
2500
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-15
V
VGS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous (TC=25℃)
-100
A
Drain Current
– Continuous (TC=100℃)
-54
A
IDM
Drain Current
– Pulsed1
-360
A
PD
Power Dissipation (TC=25℃)
41.67
W
Power Dissipation
– Derate above 25℃
0.33
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction to ambient
62
℃/W
RθJC
Thermal Resistance Junction to Case
3
℃/W
TO-252-3L


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