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AP100N02D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP100N02D
Descripción Electrónicos  20V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP100N02D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N02D
20V N-Channel Enhancement Mode MOSFET
AP100N02D REV1.0
永源微電子科技有限公司
Description
The AP100N02D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V ID =100A
RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N02D
TO252-3L
AP100N02D XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
100
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
59
A
IDM
Pulsed Drain Current note1
360
A
EAS
Single Pulsed Avalanche Energy note2
110
mJ
PD
Power Dissipation
81
W
RθJA
Thermal Resistance Junction-Ambient 1
62
℃/W
RθJC
Thermal Resistance, Junction to Case
1.85
℃/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
℃


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