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AP80N03CD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP80N03CD
Descripción Electrónicos  30V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP80N03CD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80N03CD
30V N-Channel Enhancement Mode MOSFET
AP80N03CD REV1.0
永源微電子科技有限公司
Description
The AP80N03CD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=30V ID =80A
RDS(ON) < 5.5mΩ @ VGS=10V
（Type：4.0mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80N03CD
TO-252-3L
AP80N03CD XXXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
80
A
ID@TC=75℃
Continuous Drain Current, VGS @ 10V1
50
A
IDM
Pulsed Drain Current2
320
A
EAS
Single Pulse Avalanche Energy3
196
mJ
IAS
Avalanche Current
36
A
PD@TC=25℃
Total Power Dissipation4
46
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
1.72
℃
/W


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