AP80N02DF datasheet(1/7 Pages) APME

No. de pieza	AP80N02DF

Descripción Electrónicos	20V N-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP80N02DF

20V N-Channel Enhancement Mode MOSFET

AP80N02DF REV1.0

永源微電子科技有限公司

Description

The AP80N02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =80A

RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：3.0mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N02DF

PDFN3*3-8L

AP80N02DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

80

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

59

A

IDM

Pulsed Drain Current note1

360

A

EAS

Single Pulsed Avalanche Energy note2

110

mJ

PD

Power Dissipation

81

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance, Junction to Case

1.85

℃

/W

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AP80N02DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP80N02DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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