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AP80H03GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP80H03GD
Descripción Electrónicos  30V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP80H03GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80H03GD
30V N+N-Channel Enhancement Mode MOSFET
AP80H03GD RVE1.0
永源微電子科技有限公司
Description
The AP80H03GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 30V ID =80A
RDS(ON) < 5.5mΩ @ VGS=10V (Type：4.5mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80H03GD
TO-252-4L
AP80H03GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
51
A
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
15
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
12
A
IDM
Pulsed Drain Current2
160
A
EAS
Single Pulse Avalanche Energy3
115.2
mJ
IAS
Avalanche Current
48
A
PD@TC=25℃
Total Power Dissipation4
59
W
PD@TA=25℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.1
℃
/W


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