AP60N02BD datasheet(1/7 Pages) APME

No. de pieza	AP60N02BD

Descripción Electrónicos	20V N-Channel Enhancement Mode MOSFET

PDF	7 Pages

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP60N02BD

20V N-Channel Enhancement Mode MOSFET

AP60N02BD RVE1.0

永源微電子科技有限公司

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP60N02BD

TO-252-3L

AP60N02BD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 4.5V

60

A

ID@TA=70℃

Continuous Drain Current, VGS @ 4.5V

39

A

IDM

Pulsed Drain Current note1

200

A

EAS

Single Pulsed Avalanche Energy note2

47.6

mJ

PD@TA=25℃

Power Dissipation

37

W

RθJC

Thermal Resistance, Junction to Case

4

℃

/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

Description

The AP60N02BD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=20V ID=60A

RDS(ON) < 6.5mΩ @ VGS=4.5V （Type：4.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

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AP60N02BD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP60N02BD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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