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AP40H02DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP40H02DF
Descripción Electrónicos  20V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP40H02DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP40H02DF
20V N+N-Channel Enhancement Mode MOSFET
AP40H02DF RVE1.0
永源微電子科技有限公司
Description
The AP40H02DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=20V ID=40A
RDS(ON) < 10.5mΩ @ VGS=4.5V （Type：8.5mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP40H02DF
PDFN3*3-8L
AP40H02DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID@TA=25
℃
Continuous Drain Current, VGS @ 4.5V
40
A
ID@TA=70
℃
Continuous Drain Current, VGS @ 4.5V
20
A
IDM
Pulsed Drain Current note1
120
A
EAS
Single Pulsed Avalanche Energy note2
23
mJ
PD@TA=25
℃
Power Dissipation
20
W
RθJA
Thermal Resistance Junction-Ambient 1
62
℃/W
RθJC
Thermal Resistance, Junction to Case
3.5
℃/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
℃


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