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AP40G03NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP40G03NF
Descripción Electrónicos  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP40G03NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP40G03NF
30V N+P-Channel Enhancement Mode MOSFET
AP40G03NF RVE1.0
永源微電子科技有限公司
Description
The AP40G03NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =42A
RDS(ON) < 10mΩ @ VGS=10V （Type：6.5mΩ）
VDS = -30V ID =-38A
RDS(ON) < 13mΩ @ VGS=-10V （Type：9.0mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP40G03NF
PDFN5*6-8L
AP40G03NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
42
-38
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
32.5
-27.5
A
IDM
Pulsed Drain Current2
123
-115
A
EAS
Single Pulse Avalanche Energy3
289
378
mJ
IAS
Avalanche Current
42
50
A
PD@TC=25℃
Total Power Dissipation4
46
41.3
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.3
℃
/W


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