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AP20G04DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP20G04DF
Descripción Electrónicos  40V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP20G04DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20G04DF
40V N+P-Channel Enhancement Mode MOSFET
AP20G04DF RVE1.0
永源微電子科技有限公司
Description
The AP20G04DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =23A
RDS(ON) < 18mΩ @ VGS=10V （Type：12mΩ）
VDS = -40V ID =20A
RDS(ON) < 32mΩ @ VGS=10V （Type：24mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20G04DF
PDFN3X3-L
AP20G04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Ch
P-Ch
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±25
±25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
23
-20
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
18
-16
A
IDM
Pulsed Drain Current2
46
-40
A
EAS
Single Pulse Avalanche Energy3
28
66
mJ
IAS
Avalanche Current
17.8
-27.2
A
PD@TC=25℃
Total Power Dissipation4
25
31.3
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25
℃
/W
RθJC
Thermal Resistance Junction-Case1
5
℃
/W


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