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AP20G03GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP20G03GD
Descripción Electrónicos  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP20G03GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20G03GD
30V N+P-Channel Enhancement Mode MOSFET
AP20G03GD RVE1.0
永源微電子科技有限公司
Description
The AP20G03GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =25A
RDS(ON) < 25mΩ @ VGS=10V （Type：15mΩ）
VDS = -30V ID =-18A
RDS(ON) < 42mΩ @ VGS=-10V（Type：36mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20G03GD
TO-252-4L
AP20G03GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±
20
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
25
-18
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
10
-8.1
A
IDM
Pulsed Drain Current2
52
-40
A
EAS
Single Pulse Avalanche Energy3
22
22
mJ
IAS
Avalanche Current
21
11
A
PD@TA=25℃
Total Power Dissipation4
18
18
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
60
℃
/W


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