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AP15G03DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP15G03DF
Descripción Electrónicos  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP15G03DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP15G03DF
30V N+P-Channel Enhancement Mode MOSFET
AP15G03DF RVE1.0
臺灣永源微電子科技有限公司
Description
The AP15G03DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 30V ID =19.3A
RDS(ON) < 13mΩ @ VGS=10V (Type：10mΩ)
VDS = -30V ID =-16.5A
RDS(ON) < 25mΩ @ VGS=-10V (Type：21mΩ)
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP15G03DF
PDFN3*3-8L
AP15G03DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
28
-19.7
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
22.5
-17.5
A
IDM
Pulsed Drain Current2
84
-59.1
A
EAS
Single Pulse Avalanche Energy3
89
78
mJ
IAS
Avalanche Current
34
33.1
A
PD@TC=25℃
Total Power Dissipation4
46
41.3
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
5
℃
/W


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