AP9N20HD

200V N-Channel Enhancement Mode MOSFET

AP9N20HD REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ. Max

Unit

VDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250µA

200

222

--

V

IDSS

Zero Gate Voltage Drain Current

VDS=200V, VGS=0V, TJ=25ºC

--

--

5

μA

IDSS

Zero Gate Voltage Drain Current

VDS=160V, VGS=0V, TJ=125ºC

--

--

100

IGSS

Gate-Source Leakage

VGS = ±20V

--

--

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS=VGS, ID=250µA

2.0

3.0

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS=10V, ID=4.5A

--

230

300

mΩ

Ciss

Input Capacitance

VGS=0V,

VDS=25V, f=1.0MHz

--

684

--

pF

Coss

Output Capacitance

--

103

--

Crss

Reverse Transfer Capacitance

--

37

--

Qg

Total Gate Charge

VDD=160V, ID=9.0A,

VGS=10V

--

23

--

nC

Qgs

Gate-Source Charge

--

2.5

--

Qgd

Gate-Drain Charge

--

10

--

td(on)

Turn-on Delay Time

VDD=100V, ID=9.0A,

RG=25 Ω

--

12

--

ns

tr

Turn-on Rise Time

--

22

--

td(off)

Turn-off Delay Time

--

50

--

tf

Turn-off Fall Time

--

48

--

IS

Continuous Body Diode Current

TC=25 ºC

--

--

9

A

ISM

Pulsed Diode Forward Current

--

--

36

VSD

Body Diode Voltage

TJ = 25ºC, ISD = 9A, VGS = 0V

--

--

1.4

V

trr

Reverse Recovery Time

VGS = 0V,IS = 9A, diF/dt =100A /μs

--

190

--

ns

Qrr

Reverse Recovery Charge

--

1.7

--

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.