AP8P10MSI datasheet(1/7 Pages) APME

No. de pieza	AP8P10MSI

Descripción Electrónicos	-100V P-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP8P10MSI

-100V P-Channel Enhancement Mode MOSFET

AP8P10MSI RVE1.0

永源微電子科技有限公司

Description

The AP8P10MSI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -100V ID =-8.2A

RDS(ON) < 290mΩ @ VGS=-10V （Type：235mΩ）

Application

Brushless motor

Load switch

Uninterruptible power supply

.

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP8P10MSI

SOT223-3L

AP8P10MSI XXX YYYY

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

-8.2

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

-4.5

A

IDM

Pulsed Drain Current2

-24.8

A

EAS

Single Pulse Avalanche Energy3

58

mJ

PD@TC=25℃

Total Power Dissipation4

21.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

5.4

℃

/W

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AP8P10MSI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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