AP5N50FD

500V N+FRD-Channel Enhancement Mode MOSFET

AP5N50FD REV1.0

永源微電子科技有限公司

Description

The AP5N50FD is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 500V ID =5A

RDS(ON) < 1.8Ω @ VGS=10V （Type：1.3Ω）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5N50FD

TO-252-3L

AP5N50FD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage

500

V

ID@TC=25℃

Drain Current, VGS @ 10V

5

A

ID@TC=100℃

Drain Current, VGS @ 10V

3

A

IDM

Pulsed Drain Current

25

A

VGS

Gate-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy

247

mJ

PD@TC=25℃

Power Dissipation

32.9

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC

RthJC

Thermal Resistance, Junction-to-Case

1.5

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

33

ºC/W