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AP5N10DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP5N10DF
Descripción Electrónicos  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP5N10DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP5N10DF
100V N-Channel Enhancement Mode MOSFET
AP5N10DF Rve3.8
臺灣永源微電子科技有限公司
Description
The AP5N10DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 100V ID = 5A
RDS(ON) < 140mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP5N10DF
AP5N10DF
5000
Absolute Maximum Ratings at Tj=25℃ unless otherwise noted
Parameter
Symbol
Value
Unit
Drain source voltage
VDS
100
V
Gate source voltage
VGS
±20
V
Continuous drain current1), TC=25 ℃
ID
5
A
Pulsed drain current2), TC=25 ℃
ID, pulse
15
A
Power dissipation3), TC=25 ℃
PD
17
W
Single pulsed avalanche energy5)
EAS
1.2
mJ
Operation and storage temperature
Tstg，Tj
-55 to 150
℃
Thermal resistance, junction-case
RθJC
7.4
℃/W
Thermal resistance, junction-ambient4)
RθJA
62
℃/W
P
DFN3*3-8L


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