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AP3P04AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP3P04AI
Descripción Electrónicos  -40V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP3P04AI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP3P04AI
-40V P-Channel Enhancement Mode MOSFET
AP3P04AI RVE4.0
永源微電子科技有限公司
Description
The AP3P04AI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -40V ID =-3.0A
RDS(ON) < 72mΩ @ VGS=-10V （Type：65mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP3P04AI
SOT23-3L
3P04A
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Steady State
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25
℃
Continuous Drain Current, VGS @ -4.5V1
-3.7
A
ID@TA=70
℃
Continuous Drain Current, VGS @ -4.5V1
-3.0
A
IDM
Pulsed Drain Current2
-16.1
A
PD@TA=25
℃
Total Power Dissipation3
1.32
W
PD@TA=70
℃
Total Power Dissipation3
0.84
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
125
℃/W
RθJC
Thermal Resistance Junction-Case1
80
℃/W


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